CHM3082JPT 12 c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 3 0 v o l t s c u r r e n t 12 ampere a p p l i c a t i o n f e a t u r e * super high density cell design for extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . c/w 2007-12 (note 3) note : 1. surface mounted on fr4 board , t <=10sec * high saturation current capability. 2. pulse test , pulse width <= 300us , duty cycle <= 2% 50 c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a d i m e n s i o n s i n m i l l i m e t e r s = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l so-8 parameter CHM3082JPT * small flat package. (so-8 ) t units j v dss drain-source voltage operating temperature range 30 -55 to 150 v c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting v so-8 gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p 1 d 4 maximum 8 power dissipation 5 2500 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 50 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 1 4 5 8 s s s g d d d d
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3082JPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x 1 u n i t s b v o f f c h a r a c t e r i s t i c s d s s drain-source breakdown voltage v 10.5 gs o n c h a r a c t e r i s t i c s = 0 v, i d = 250 a n a r 30 ds(on) v static drain-source on-resistance n a m w i vgs=10v, id=12a gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 24 v, v v gs switching gs characteristics = 20v, = 0 v v ds q gs = 0 v gate-source charge a +100 -100 v gs q gd = gate-drain charge -20v, v ds t = 0 v on turn-on time ns v dd = 15v i d = 1.0a , v v gs g (th) s = 10 v gate threshold voltage 30 v t ds r rise time = v 18 gs , i d = 250 a 1 v vgs=4.5v, id=10a 90 t f fall time 30 q g total gate charge 6.0 vds=15v, id=12a vgs=5v turn-off time t off rgen= 6 w (note 2) (note 4) 3 nc 15 9 45 15 drain-source diode characteristics and maximum ratings 19.6 i v sd drain-source diode forward current drain-source diode forward voltage i s = 4.5a , v g s = 0 v 4.5 1.0 a v (note 1) (note 2) 15 8.5 11 6.5 26 i gssr dynamic characteristics input capacitance reverse transfer capacitance output capacitance c iss c oss c rss v ds = 15v, v gs = 0v, f = 1.0 mhz 2115 410 265 pf
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3082JPT ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 1.0 2.0 0 5 10 25 4.0 15 20 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics v gs= 10,8,6,5v v gs= 3.0v 25 i , dr a in current (a) d 0 5 10 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 1.0 2.0 15 20 0 5 10 15 20 0 1 2 3 4 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge id=12a vds=15v temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs 3.0 4.0 v gs= 4.0v 3.0 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) f i g u r e 4 . on-resistance variation with temperature id=12a vgs=10v -50 0 50 100 150 200 5
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